general purpose transistors sot?23 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. pnp silicon feature collector current capability i c = -500 ma. collector-emitter voltage v ceo (max) = -45 v. general purpose switching and amplification. pnp complement: bc807 series. device marking and ordering information device marking shipping bc807-16lt1 5a1 3000/tape&reel bc807-25lt1 5b1 3000/tape&reel bc807-40lt1 5c1 3000/tape&reel maximum ratings rating symbol value unit collector?emitter voltage v ceo ?45 v collector?base voltage v cbo ?50 v emitter?base voltage v ebo ?5.0 v collector current ? continuous i c ?500 madc thermal characteristics lobmys citsiretcarahc max unit total device dissipation fr? 5 board, (1) p d t a wm 522 c52 = 8.1 c52 evoba etared mw/c thermal resistance, junction to ambient r ja 556 c/w p noitapissid ecived latot d alumina substrate, (2) t a wm 003 c52 = 4.2 c52 evoba etared mw/c thermal resistance , junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c 2 emitter 3 collector 1 base we declare that the material of product compliance with rohs requirements. willas rohs product for packing code suffix "g" halogen free product for packing code suffix "h" BC807-XXLT1 2012- willas electronic corp. preliminary
electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage (i c v )am 01? = (br)ceo ?45 ? ? v collector?emitter breakdown voltage (v eb = 0, i c = ?10 v )a (br)ces ?50 ? ? v emitter?base breakdown voltage (i e = ?1.0 v )a (br)ebo ?5.0 ? ? v i tnerruc ffotuc rotcelloc cbo (v cb an001? ? ? )v 02? = (v cb = ?20 v, t j 0.5? ? ? )c051 = a electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit on characteristics h niag tnerruc cd fe ? (i c = ?100 ma, v ce 052 ? 001 61?708cb )v 0.1? = 004 ? 061 52?708cb 006 ? 052 04?708cb (i c = ?500 ma, v ce = ?1.0 v) 40 ? ? collector?emitter saturation voltage v ce(sat) ? ? ?0.7 v (i c = ?500 ma, i b = ?50 ma) base?emitter on voltage v be(on) ? ? ?1.2 v (i c = ?500 ma, v ce = ?1.0 v) small?signal characteristics current?gain ? bandwidth product f t 100 ? ? mhz (i c = ?10 ma, v ce = ?5.0 v dc , f = 100 mhz) output capacitance c obo ? 10 ? pf (v cb = ?10 v, f = 1.0 mhz) 2012- willas electronic corp. bc807-xxt1 preliminary
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. BC807-XXLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) preliminary
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